Hynix Semiconductor announced today that it has received validation for products based on the company’s new 256MB DDR3 chips built on their new 40nm process.

Validated products include a 4GB SODIMM and a 2GB DIMM, both of which run at 1333MHz on a 1.5V V_DIMM. The firm says that the chips are capable of speeds up to DDR3-1866.

Hynix says that the company’s 40nm process enables reductions in power consumption of up to 40% over 50nm ICs, and improves foundry throughput by 60%.

“The current mainstream density has been rapidly transferring from 1Gb to 2Gb for the higher performance servers market. We expect to secure the industry’s best features of both 1Gb and 2Gb DDR3 products”, said Hynix CMO J.B. Kim.

Mass production of the new ICs has already begun, with volume shipments expected in 1Q10.