Samsung has announced today that the newest Semiconductor R&D Center has begun work on next-gen logic and memory technologies.

The new facility is a part of the company’s Foundry research program, and it’s devoted to high-K, 3D gates, EUV lithography, and sub-28nm interconnect/packaging processes.

“High-performance and low power are no longer mutually exclusive,” said Kinam Kim, EVP and GM of Samsung Electronics’ Semiconductor R&D Center.

“There is critical R&D work to be done at the most advanced process nodes with regards to minimising power consumption while incorporating a feature rich menu of devices for designers to create innovative next-generation mobile and high performance SoC devices.”

Developments produced at the facility will not only benefit Samsung, but partners like the IBM Technology Alliance, IMEC, Sematech, and other fabless IP firms.